Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
2.3V @ 94µA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
PG-SOT223-4
Series
SIPMOS®
Rds On (Max) @ Id, Vgs
45Ohm @ 120mA, 10V
Power Dissipation (Max)
1.8W (Ta)
Package / Case
TO-261-4, TO-261AA
Package
Tape & Reel (TR)
Product Attribute
Attribute Value
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
6.6 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
120mA (Ta)
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